首页> 外文期刊>Materials transactions >Effects of Annealing Temperature on the Properties of Strontium Copper Oxide Prepared by Radio Frequency Reactive Magnetron Sputtering. Method.
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Effects of Annealing Temperature on the Properties of Strontium Copper Oxide Prepared by Radio Frequency Reactive Magnetron Sputtering. Method.

机译:退火温度对射频反应磁控溅射制备锶氧化铜性能的影响方法。

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Electrical, structural and optical properties of annealed transparent strontium copper oxide (SCO) films were studied in this paper. These SCO films were first deposited by reactive radio frequency magnetron sputtering technique on glass substrates at room temperature with ultra highly pure oxygen and a 100 W sputtering power, and then annealed at different temperatures ranging from 373 to 723 K in an atmosphere of oxygen controlled at 101 Pa. Results showed that the resistivity increased first as the annealing temperature raised from 373 to 473 K, and then decreased when annealed at 623 K. Carrier density of an annealed film increased from 7.09 x 10~(20) cm~(-3) to 1.21 x 10~(21) cm~(-3) as the annealing temperature increased. Results also showed that the resistivity of a SCO film was highly correlated to the carrier mobility. The highest carrier mobility observed by annealing a SCO film at 623 K was 4.0 x 10~(-5) m~2 V~(-1) S~(-1). The optical transmittance of an annealed SCO film in the visible range at 550 nm fell between 52.6 percent and 58.2 percent. The Hall coefficient measured at room temperature indicated the nature of the annealed films was p-type.
机译:本文研究了退火的透明锶氧化铜铜(SCO)薄膜的电,结构和光学性能。这些SCO薄膜首先在室温下用超高纯氧和100 W溅射功率通过反应射频磁控溅射技术沉积在玻璃基板上,然后在氧气控制温度为373至723 K的不同温度下退火。 101 Pa。结果表明,随着退火温度从373 K升高到473 K,电阻率首先增加,然后在623 K退火时电阻率降低。退火膜的载流子密度从7.09 x 10〜(20)cm〜(-3)增加随退火温度的升高而增加至1.21 x 10〜(21)cm〜(-3)。结果还表明,SCO膜的电阻率与载流子迁移率高度相关。通过在623 K下退火SCO膜观察到的最高载流子迁移率为4.0 x 10〜(-5)m〜2 V〜(-1)S〜(-1)。退火后的SCO薄膜在550 nm可见光范围内的透光率在52.6%和58.2%之间。在室温下测量的霍尔系数表明退火膜的性质是p型的。

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