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An isotropic Damage Mechanism during Grinding of CdZnTe Wafers

机译:CdZnTe晶片研磨过程中的各向同性损伤机理

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摘要

The grinding wheels with grit size of #600 and #2000 are employed to grind CdZnTe (110) and (111) planes, and ground surface and subsurface damages were investigated. The experimental results show the damage types are affected by the crystallographic orientation and grit size. When grinding CdZnTe wafers with grit size of #600, due to different angle between the cleavage plane and ground surface, the surface morphology and directions of cracks on the (111) plane are different from those on the (110) plane. When grinding CdZnTe wafers with grit size of #2000, the (111) plane has less plastic deformation than the (110) plane, and there is obvious direction of stacking faults on subsurface.
机译:用#600和#2000粒度的砂轮研磨CdZnTe(110)和(111)平面,并研究了地表和地下损伤。实验结果表明,损伤类型受晶体学取向和粒度的影响。当研磨粒度为#600的CdZnTe晶片时,由于劈裂面和地面之间的角度不同,(111)面上的表面形貌和裂纹方向与(110)面上的不同。当研磨粒度为#2000的CdZnTe晶片时,(111)平面的塑性变形小于(110)平面,并且在地下存在明显的堆垛层错方向。

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