Copperhyphen;related deep level defects in IIIndash;V semiconductors

摘要

Copperhyphen;diffused InP and GaAs have been studied using junction spacehyphen;charge spectroscopy. Two dominant copperhyphen;related deep level defects are observed in both materials. Photoionization cross sections of holes and electrons, thermal hole emission rates, and one electron capture cross section have been measured. In InP one of the ionization spectra exhibits a pronounced phononhyphen;related structure. The results, together with previous work on GaAs:Cu, GaP:Cu, GaAs:Cu, and AlGaAs:Cu, indicate a common geometrical structure for each of the two copperhyphen;related defects in all the materials.