Electronic Conduction Model in Ferroelectrics Based on Phonon-Assisted Tunneling Emission

摘要

We present here experiments on current-voltage (I-V) characteristics measured at different temperatures for ferroelectric semiconductor SbSI. The I-V characteristics exhibited, an evident dependence on temperature and supralinearity in the region of high voltages. Temperature dependent I-V characteristics are explained on assumption that the current is caused by a process of the phonon-assisted electron tunneling from the traps located in the region of a high electric field. Under basis of this model the results on current dependences on voltage and temperature obtained by other authors are also explained.