Phonon-assisted tunneling model is applied for explication of temperature-dependent I-V characteristics measured by other authors for (Bi_(1-x)Sb_(x))_(2)Te_(3) and ZnSnO_(3) nanowires. The fit of experimental data of the current dependence on applied voltage measured at different temperatures with two theories of phonon-assisted tunnelling explains well the variation of I-V curves with temperature as well as the temperature dependence of conductivity of nanowire.
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