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Institut for Microelectronics, TU Wien Gusshausstr. 27-29, A-1040 Wien, Austria;
机译:Accurate Calculation of Gate Tunneling Current in Double-Gate and Single-Gate SOI MOSFETs Through Gate Dielectric Stacks
机译:Impact of gate overlap and underlap on analog/RF and linearity performance of dual-material gate-oxide-stack double-gate TFET
机译:Sub-400$^{circ}{rm C}~{rm Si}_{2}{rm H}_{6}$ Passivation, ${rm HfO}_{2}$ Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for ${rm In}_{0.7}{rm Ga}_{0.3}{rm As}$ and ${rm Ge}_{1-x}{rm Sn}_{x}$ CMOS
机译:Gate-Stack工程师MBTI对高电压逻辑内存高ĸ/金属门器件的改进
机译:使用Mars Organic Analyzer(便携式自动微型毛细管电泳仪)分析有机分子。
机译:大豆vspβcDNA对玉米进行核转化后VSPβ蛋白丰度的发育变化
机译:Koubunkai Nou Rutherford Kouhou Sanranhou Ni Yorkou Yudenlits Gate Stack Kouzou Nikansuru Kenkyu
机译:混合动力电动汽车和控制策略汽车技术教育(GaTE)计划,(1998-2004最终技术GaTE报告)