Growth and properties of GaAs and GaN films and low-dimensional GaAs/QWsInGaAs structures on si substrates with a ge buffer layer

摘要

The conditions for producing mirror-smooth Ge buffer layers of uniform size on Si(100) and Si(111) substrates by means of hot wire chemical vapor deposition (HW-CVD) at a low temperature (350°C) are determined. Single-crystal GaN and GaAs films and low-dimensional GaAs/QWInGaAs/ GaAs/QWInGaAs/GaAs/Ge/Si structures of uniform smoothness are obtained via MOVPE at reduced pressures. Their quantum wells are found to be characterized by intense photoluminescence comparable in intensity to that produced on GaAs substrates.