Random telegraph noise and leakage current in smart power technology DMOS devices

摘要

Random telegraph signal (RTS) noise, analyzed in time and frequency domains, and leakage current are studied in smart power technology double-diffused metal oxide semiconductor (DMOS) field effect transistors. The RTS noise is strongly correlated with the presence of an excess leakage current in the device. The observed drain current (gate bias) dependencies of relative (absolute) RTS amplitude and gate voltage dependence of RTS mean pulse widths suggest that the RTS noise sources are located under the gate and in the drain-body region. A model, where the multicell DMOS structure is considered as parallel connection of submicron MOSFETs, is proposed to account for the results.