High pressure effect on MoS_2 and MoSe_2 single crystals grown by CVT method

摘要

Single crystals of MoS_2 and MoSe_2 were grown by chemical vapour transport method using iodine as a transporting agent and characterized by optical microscopy, energy dispersive analysis (EDAX), X-ray powder diffraction (XRD) and Hall mobility at room temperature. The variation of electrical resistance under pressure was monitored in a Bridgman anvil set-up up to 6.5 GPa to identify occurrence of any structural transition. MoS_2 and MoSe_2 do not undergo any structural transitions under pressure.