Wafer-Size and Single-Crystal MoSe_2 Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting

摘要

Two-dimensional (2D) atomic-layered semiconductors are important for next-generation electronics and optoelectronics. Here, we designed the growth of an MoSe_2 atomic layer on a lattice-matched GaN semiconductor substrate. The results demonstrated that the MoSe_2 films were less than three atomic layers thick and were single crystalline of MoSe_2 over the entire GaN substrate. The ultrathin MoSe_2/GaN heterojunction diode demonstrated ∼850 nm light emission and could also be used in photovoltaic applications.