DIE FOR GROWING SINGLE CRYSTAL BY EFG METHOD, METHOD FOR GROWING SINGLE CRYSTAL BY EFG METHOD AND SINGLE CRYSTAL GROWN BY EFG METHOD

摘要

To improve the uniformity of impurity concentration of a grown single crystal.SOLUTION: A die 1 for growing a single crystal by an EFG method comprises: a lower surface 2 immersed in a raw material melt 12 having added impurities; a rectangular upper surface 5 facing a seed crystal 15 and having a long side 3 and a short side 4; and a plurality of slit parts 6 extended from the lower surface 2 to the upper surface 5 and raising a raw material melt 12 from the lower surface 2 to the upper surface 5. Since the longitudinal directions 7l of the openings 7 on the upper surface 5 of the plurality of slit parts 6 are parallel to each other and are not parallel to the long side 3 of the upper surface 5, an interval δ between the openings 7 of the slit parts 6 adjacent to each other is shorter than when the longitudinal directions 7l of the openings 7 on the upper surface 5 of the slit parts 6 are parallel to the long side 3 of the upper surface 5 in the total area of the openings 7 of the slit parts 6. Since segregation of impurities between the slit parts 6 hardly occurs, the uniformity of impurity concentration of a grown single crystal 14 can be improved.SELECTED DRAWING: Figure 2