首页> 外文期刊>Electrochimica Acta >Effect of potassium hydrogen phthalate (C_8H_5KO_4) on the one-step electrodeposition of single-phase CuInS_2 thin films from acidic solution
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Effect of potassium hydrogen phthalate (C_8H_5KO_4) on the one-step electrodeposition of single-phase CuInS_2 thin films from acidic solution

机译:邻苯二甲酸氢钾(C_8H_5KO_4)对酸性溶液中单相CuInS_2薄膜一步电沉积的影响

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摘要

The effect of potassium hydrogen phthalate (C_8H_5KO_4) as a special additive on the one-step electrode-position of single-phase CuInS_2 thin films from acidic solution (pH 2.5) was investigated in detail. The XRD, SEM and UV-vis-NIR characterization confirms that the addition of an adequate concentration of C_8H_5KO_4 (23 mM) to the electrolytic bath containing 12.5 mM Cu~(2+), 10 mM In~(3+), 40 mM S_2(O_3)~(2-) and 100 mM LiCl can contribute greatly to the controllable growth of pure chalcopyrite CuInS_2 films with uniform surfaces and an ideal band gap of approximately 1.54 eV. Complexation studies of C_8H_5KO_4 with Cu~(2+) and In~(3+) in electrolytic solutions indicated that C_8H_5KO_4 can complex Cu~(2+) more strongly than In~(3+) and move the electrode potentials of Cu~(2+) and In~(3+) near each other as determined by polarization analysis. Furthermore, the potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) analysis performed in a series of solution systems revealed a three-step reaction mechanism for CuInS_2 deposition and considerable adsorption of C_8H_5(O_4)~- and Cu(C_8H_5O_4)~+ to the cathode surface. This deposition shows that the synergetic effects of complexation and adsorption originated from the additive on the Cu~(2+) electro-reduction, thus promoting the co-deposition of copper, indium and sulfur in the form of single-phase CuInS_2.
机译:详细研究了邻苯二甲酸氢钾(C_8H_5KO_4)作为特殊添加剂对酸性溶液(pH 2.5)下CuInS_2单相薄膜一步式电沉积的影响。 XRD,SEM和UV-vis-NIR表征证实了向含有12.5 mM Cu〜(2 +),10 mM In〜(3 +),40 mM的电解浴中添加足够浓度的C_8H_5KO_4(23 mM) S_2(O_3)〜(2-)和100 mM LiCl可以为可控生长具有均匀表面和约1.54 eV的理想带隙的纯黄铜矿CuInS_2薄膜做出重要贡献。 C_8H_5KO_4与Cu〜(2+)和In〜(3+)在电解质溶液中的络合研究表明,C_8H_5KO_4比In〜(3+)能够更强地络合Cu〜(2+)并移动Cu〜(2+)的电极电位通过极化分析确定2+)和In〜(3+)彼此接近。此外,在一系列溶液系统中进行的电位动力学极化和电化学阻抗谱(EIS)分析揭示了CuInS_2沉积的三步反应机理以及C_8H_5(O_4)〜-和Cu(C_8H_5O_4)〜+大量吸附到阴极上表面。该沉积表明络合和吸附的协同作用源于添加剂对Cu〜(2+)的电还原作用,从而促进了铜,铟和硫以单相CuInS_2的形式共沉积。

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