单步电沉积法制备CuInS_2薄膜

摘要

采用单步电沉积法在Mo基底卜制备了高质量的CuInS_2薄膜.用X射线衍射仪(XRD)和扫描电子显微镜(SEM)表征了样品的结构和形貌,研究了沉积电位、退火温度、pH值、反应物浓度等工艺条件对制备的CuInS_2薄膜形貌、组分及性能的影响.制备的CuInS_2薄膜致密平整,呈黄铜矿结构,晶粒大小为1-2μm.用紫外-可见光分光光度计测试了其光学性能,计算得到常温下禁带宽度为1.41 eV,非常适合用作薄膜太阳电池的吸收层材料.%Ⅰ-Ⅲ-Ⅵ_2 ternary chalcopyrite copper indium disulfide (CuInS_2) films were prepared by one-step electrodeposition technique on molybdenum substrates. The structure and morphology of the samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The effects of deposition potential, annealing temperature, pH, and solution concentration on the formation of the electrodeposited thin films were investigated. The prepared CuInS_2 thin films were found to be compact and uniform with grain sizes of 1-2 μm. Their optical property was characterized by UV-Vis spectrophotometry and the bandgap value was calculated to be 1.41 eV.