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首页> 外文期刊>Electrochimica Acta >AFM imaging of copper stripping/deposition processes in selected electrolytes on boron-doped diamond thin-film electrodes
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AFM imaging of copper stripping/deposition processes in selected electrolytes on boron-doped diamond thin-film electrodes

机译:掺硼金刚石薄膜电极上所选电解质中铜剥离/沉积过程的AFM成像

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摘要

Electrochemical atomic force microscopy (EC AFM) studies of copper stripping/deposition processes under potentiostatic control were carried out on boron doped diamond thin-film electrodes in solutions of different ability to form copper complexes. Careful analysis of the electrode surface profiles taken at the potentials switched between oxidative and reductive values reveals the nucleation state and the early stages of complex formation when cations are released from the deposited metal. An unusual increase of the deposit-layer thickness is observed in sulfate- and phosphate-solutions at the positive potentials in contrast to an expected decrease of the surface adlayer thickness accompanying its stripping. The last effect takes place in the case of copper stripping in the presence of nitrates when no complex is formed. Similar behavior is observed on the HOPG electrode used in these studies as a reference surface.
机译:在掺杂硼的金刚石薄膜电极上,在形成铜络合物能力不同的溶液中,对恒电位控制下的铜剥离/沉积过程进行了电化学原子力显微镜(EC AFM)研究。仔细分析在氧化值和还原值之间切换的电势下获得的电极表面轮廓,可以揭示成核状态和从沉积金属中释放出阳离子时络合物形成的早期阶段。在硫酸盐和磷酸盐溶液中,在正电势下观察到沉积层厚度的异常增加,与此相反,伴随剥离的表面沉积层厚度的预期下降是相反的。在没有形成络合物的情况下,在存在硝酸盐的情况下进行铜剥离时,会产生最后的效果。在这些研究中用作参考表面的HOPG电极上观察到了类似的行为。

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