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METHOD FOR PRODUCING BORON-DOPED DIAMOND, BORON-DOPED DIAMOND, AND ELECTRODE

机译:制备掺硼钻石,掺硼钻石和电极的方法

摘要

PPROBLEM TO BE SOLVED: To provide a method for producing boron-doped diamond by which boron-doped diamond particles can be easily produced, to provide a boron-doped diamond, and to provide an electrode. PSOLUTION: The method for producing the boron-doped diamond is characterized in that the boron-doped diamond is grown on the surface of a substrate, where tungsten or its oxide is exposed at least a portion of the surface. The surface roughness of the substrate is preferably 0.5 m. As the substrate, a substrate wherein areas composed of tungsten or its oxide and areas free of tungsten exist in a mixed state can be used. PCOPYRIGHT: (C)2010,JPO&INPIT
机译:

要解决的问题:提供一种生产掺硼金刚石的方法,通过该方法可以容易地生产掺硼金刚石颗粒,从而提供掺硼金刚石和电极。

解决方案:制备掺杂硼的金刚石的方法的特征在于,掺杂硼的金刚石生长在基材的表面上,其中钨或其氧化物暴露在表面的至少一部分上。基板的表面粗糙度优选为0.5m。作为基板,可以使用由钨或其氧化物组成的区域和不含钨的区域以混合状态存在的基板。

版权:(C)2010,日本特许厅&INPIT

著录项

  • 公开/公告号JP2010024506A

    专利类型

  • 公开/公告日2010-02-04

    原文格式PDF

  • 申请/专利权人 CENTRAL JAPAN RAILWAY CO;

    申请/专利号JP20080188619

  • 发明设计人 TERAJIMA CHIAKI;FUJISHIMA AKIRA;

    申请日2008-07-22

  • 分类号C23C16/27;C01B31/06;H01M4/96;H01M8/10;

  • 国家 JP

  • 入库时间 2022-08-21 19:01:47

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