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Fabrication and Photoelectrochemical Behavior of Ordered CIGS Nanowire Arrays for Application in Solar Cells

机译:用于太阳能电池的有序CIGS纳米线阵列的制备和光电化学行为

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In this work, we report some preliminary results concerning the fabrication of quaternary copper, indium, gallium, and selenium CIGS nanowires that were grown inside the channels of an anodic alumina membrane by one-step potentiostatic deposition at different applied potentials and room temperature. A tunable nanowire composition was achieved through a manipulation of the applied potential and electrolyte composition. X-ray diffraction analysis showed that nanowires, whose chemical composition was determined by energy-dispersive spectroscopy analysis, were amorphous. A composition of Cu0.203In0.153Ga0.131Se0.513, very close to the stoichiometric value, was obtained. These nanostructures were also characterized by photoelectrochemical measurements: They showed a cathodic photocurrent and an optical gap of 1.55 eV
机译:在这项工作中,我们报告了一些初步结果,这些结果涉及在不同的施加电势和室温下通过一步恒电位沉积在阳极氧化铝膜通道内生长的季铜,铟,镓和硒CIGS纳米线的制备。通过操纵所施加的电势和电解质成分获得了可调的纳米线成分。 X射线衍射分析表明,其化学​​成分由能谱分析确定的纳米线是非晶态的。获得非常接近化学计量值的Cu0.203In0.153Ga0.131Se0.513的组成。这些纳米结构还通过光电化学测量进行了表征:它们显示出阴极光电流和1.55 eV的光学间隙

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