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Fabrication of CZTSe/CIGS Nanowire Arrays by One-Step Electrodeposition for Solar-Cell Application

机译:用一步电沉积在太阳能电池应用中使用CZTSE / CIGS纳米线阵列的制造

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摘要

The paper reports some preliminary results concerning the manufacturing process of CuZnSnSe (CZTSe) and CuInGaSe (CIGS) nanowire arrays obtained by one-step electrodeposition for p-n junction fabrication. CZTSe nanowires were obtained through electrodeposition in a polycarbonate membrane by applying a rectangular pulsed current, while their morphology was optimized by appropriately setting the potential and the electrolyte composition. The electrochemical parameters, including pH and composition of the solution, were optimized to obtain a mechanically stable array of nanowires. The samples were characterized by scanning electron microscopy, Raman spectroscopy, and energy-dispersion spectroscopy. The nanostructures obtained showed a cylindrical shape with an average diameter of about 230 nm and a length of about 3 µm, and were interconnected due to the morphology of the polycarbonate membrane. To create the p-n junctions, first a thin film of CZTSe was electrodeposited to avoid direct contact between the ZnS and Mo. Subsequently, an annealing process was carried out at 500 °C in a S atmosphere for 40 min. The ZnS was obtained by chemical bath deposition at 95 °C for 90 min. Finally, to complete the cell, ZnO and ZnO:Al layers were deposited by magnetron-sputtering.
机译:本文报告了通过单步电沉积的Cuznsnse(CZTSE)和Cucingase(CIGS)纳米线阵列的制造过程的一些初步结果,用于P-N结制造。通过施加矩形脉冲电流在聚碳酸酯膜中通过电沉积获得CZTSE纳米线,而通过适当地设定电位和电解质组合物来优化它们的形态。优化了溶液的电化学参数,包括pH和溶液的组成,得到机械稳定的纳米线阵列。通过扫描电子显微镜,拉曼光谱和能量分散光谱来表征样品。获得的纳米结构显示出圆柱形,平均直径为约230nm,长度为约3μm,并且由于聚碳酸酯膜的形态而互连。为了产生P-N结,第一薄膜被电沉积避免ZnS和Mo之间的直接接触。随后,在S的大气中在500℃下进行退火处理40分钟。通过化学浴沉积在95℃下获得90分钟的Zn。最后,为了完成细胞,通过磁控溅射沉积ZnO和ZnO:Al层。

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