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Fabrication and Photoelectrochemical Behavior of OrderedudCIGS Nanowire Arrays for Application in Solar Cells

机译:有序 ud的制备及光电化学行为用于太阳能电池的CIGS纳米线阵列

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摘要

In this work, we report some preliminary results concerning the fabrication of quaternary copper, indium, gallium, and seleniumud CIGS nanowires that were grown inside the channels of an anodic alumina membrane by one-step potentiostatic deposition atuddifferent applied potentials and room temperature. A tunable nanowire composition was achieved through a manipulation of theudapplied potential and electrolyte composition. X-ray diffraction analysis showed that nanowires, whose chemical composition wasuddetermined by energy-dispersive spectroscopy analysis, were amorphous. A composition of Cu0.203In0.153Ga0.131Se0.513, very closeudto the stoichiometric value, was obtained. These nanostructures were also characterized by photoelectrochemical measurements:udThey showed a cathodic photocurrent and an optical gap of 1.55 eV.
机译:在这项工作中,我们报告了一些有关制备季铜,铟,镓和硒的CIGS纳米线的初步结果,这些CIGS纳米线是通过在不同的施加电势和空间下通过一步恒电位沉积在阳极氧化铝膜通道内生长的。温度。可通过控制施加的电势和电解质成分获得可调谐的纳米线成分。 X射线衍射分析表明,化学成分由能谱分析确定的纳米线是无定形的。获得非常接近化学计量值的Cu0.203In0.153Ga0.131Se0.513的组成。这些纳米结构还通过光电化学测量来表征:ud它们显示出阴极光电流和1.55 eV的光学间隙。

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