In this work, we report some preliminary results concerning the fabrication of quaternary copper, indium, gallium, and seleniumud CIGS nanowires that were grown inside the channels of an anodic alumina membrane by one-step potentiostatic deposition atuddifferent applied potentials and room temperature. A tunable nanowire composition was achieved through a manipulation of theudapplied potential and electrolyte composition. X-ray diffraction analysis showed that nanowires, whose chemical composition wasuddetermined by energy-dispersive spectroscopy analysis, were amorphous. A composition of Cu0.203In0.153Ga0.131Se0.513, very closeudto the stoichiometric value, was obtained. These nanostructures were also characterized by photoelectrochemical measurements:udThey showed a cathodic photocurrent and an optical gap of 1.55 eV.
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