Gate Oxides Grown on Deuterium-Implanted Silicon Substrate

摘要

Thin oxides (4 nm) grown on deuterium-implantedsilicon substrates were investigated for the first time. It wasobserved that deuterium implantation at a light dose of 1×1014/cm2 at keV significantly reduced the leakage current throughthe oxide. A reduction in electron trap density has also beenobserved for this oxide. An increase in leakage current, observedfor both higher and lower energy deuterium implants, waspossible because of enhanced substrate damage and out-diffusionof deuterium, respectively. Deuterium-implanted oxide,subjected to N2O annealing, showed further improvement inelectrical characteristics.