Defect Depth Profile in CdTe:Cl by Positron Annihilation

摘要

Depth resolved defect profiles have been obtained from CdTe:Cl samples using both positron lifetime spectroscopy and Doppler-broadening of annihilation radiation spectra. The dominant defect species was identified as the chlorine-vacancy complex or A center. The defect concentration in the bulk was found to be 2.5 * 10~(16) cm~(-3), with a much higher near-surface concentration, in agreement with chlorine concentration profiles obtained using the radiotracer sectioning technique. It is proposed that the Cd vacancy is involved in the diffusion of Cl atoms.