Formation of low resistance and high reflectivity reflector on p-type GaN using NiAuWAg ohmic contact

摘要

We investigate the properties of a NiAuWAg reflector layer deposited on a p-GaN layer for use in high efficiency GaN flip-chip light-emitting diodes (LEDs) or vertical LEDs. The FCLEDs fabricated with NiAuWAg contact showed good current-voltage characteristic and an enhanced the optical output power compared to those fabricated with NiAuAg contact due to the high reflectivity, smooth surface after annealing, and good Ohmic property of NiAuWAg. These results clearly indicate that a NiAuWAg contact on p-GaN constitutes a promising reflector and Ohmic scheme for achieving high-brightness LEDs.