We propose a new method to estimate the explosive crystallization (EC) velocity (vEC) of amorphous silicon (a-Si) films using multi-pulse flash lamp annealing (FLA). This system produces discrete pulses at frequencies of 1-10 kHz to form a quasi-millisecond pulse. The multi-pulses leave behind macroscopic stripe patterns on the surfaces of polycrystalline Si (poly-Si) films, the widths of which are indications of vEC. We find that catalytic chemical-vapor-deposited (Cat-CVD) and sputtered a-Si films show vEC of ～4 m/s, whereas the use of electron-beam-evaporated a-Si results in much higher vEC of ～14 m/s, indicating the emergence of different EC mechanisms.
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机译：我们提出了一种使用多脉冲闪光灯退火（FLA）估算非晶硅（a-Si）膜的爆炸结晶（EC）速度（vEC）的新方法。该系统产生频率为1-10 kHz的离散脉冲，以形成准毫秒脉冲。多脉冲在多晶硅（poly-Si）薄膜表面留下宏观条纹图案，其宽度是vEC的指标。我们发现催化化学气相沉积（Cat-CVD）和溅射的a-Si膜显示的vEC约为4 m / s，而使用电子束蒸发的a-Si则导致的vEC更高，约为14 m / s / s，表示出现了不同的EC机制。
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