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Void-Free Trench-Filling by -Electroless Copper Deposition Using the Combination of Accelerating and Inhibiting Additives

机译:加速剂和抑制剂的组合,通过化学镀铜进行无空隙的沟槽填充

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摘要

Electroless copper deposition was performed on submicrometer-trench patterned substrates with a bath containing 8-hydroxy-7-iodo-5-quinoline sulfonic acid (HIQSA) as an accelerating additive and polyethylene glycol (PEG) as an inhibiting additive. Void-free copper filling of trenches was achieved by the addition of both HIQSA and PEG at specific concentrations. Copper deposition rate measurements revealed that HIQSA accelerated the deposition only when it was added together with a very low concentration of PEG. The void-free filling is considered to have resulted from the significant acceleration brought about by HIQSA at the trench bottom, where the concentration of PEG is low.
机译:在亚微米级沟槽图案化的基板上进行化学镀铜,该镀浴中含有8-羟基-7-碘-5-喹啉磺酸(HIQSA)作为促进添加剂,而聚乙二醇(PEG)作为抑制添加剂。通过添加特定浓度的HIQSA和PEG,可以实现沟槽的无空隙铜填充。铜沉积速率的测量结果表明,仅当HIQSA与极低浓度的PEG一起添加时,它才能加速沉积。无空隙填充被认为是由于HIQSA在沟槽底部(PEG浓度低)导致的显着加速而产生的。

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