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Copper Bottom-up Deposition by Breakdown of PEG-Cl Inhibition

机译:通过分解PEG-Cl抑制铜自下而上沉积

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摘要

Copper bottom-up deposition in 200 nm trenches by an acid-copper sulfate with only two additives [poly (ethylene glycol) (PEG) and Cl~-] is achieved. The inhibiting effect of electrodeposition by PEG is strongly related to Cl~- Concentration. Secondary-ion mass spectroscopy measurements show that Cl~- is consumed in the electroplating process. The explanation of bottom-up deposition realized in copper superfilling, in which the decrease of Cl~- concentration causes rapid electrodeposition on trench bottoms, is verified experimentally.
机译:通过仅使用两种添加剂[聚(乙二醇)(PEG)和Cl〜-]的酸铜硫酸盐在200 nm沟槽中进行了自下而上的铜沉积。 PEG对电沉积的抑制作用与Cl〜-浓度密切相关。二次离子质谱测量表明,Cl〜-在电镀过程中被消耗。实验证明了在铜超填充中实现的自底向上沉积的解释,其中Cl〜-浓度的降低导致沟槽底部快速电沉积。

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