Low Temperature Chemical Vapor Deposition of Titanium Nitride Thin Films with Hydrazine and Tetrakis (dimethylamido) titanium

摘要

Hydrazine has been used as a precursor along withtetrakis (dimethylamido) titanium (TDMAT) for the lowtemperature chemical vapor deposition of TiN thin films between50 and 200℃ at 10 Torr, with growth rates between 5 and 35nm/min. The Ti: N ratio in these films is approximately 1:1. Theycontain from 2 to 6% carbon, and varying amounts of oxygen upto 36% as a result of diffusion after air exposure. Moreover, lowtemperature growth is improved with hydrazine-ammoniamixtures containing as little as 1.9% hydrazine. The Ti: N ratioof these films is also approximately 1:1; but they contain nocarbon or oxygen according to Rutherford backscatteringspectroscopy. The X-ray diffraction of these films grown frompure hydrazine or the hydrazine-ammonia mixture shows peakcorresponding to TiN. The resistivity of the films is on the orderof 104μΩcm. The low temperature growth is attributed to theweak N-N bond in hydrazine and its strong reducing ability.