Physical and Electrical Properties of Zr-Silicate Dielectric Layers Deposited by Atomic Layer Deposition

摘要

The physical (growth rate, composition, crystallization) and electrical (C-V, I-V) properties of Zr-silicates deposited by atomic layer deposition are reported. Hf- and Zr-silicates are particularly attractive for use as gate dielectrics in advanced complementary metal-oxide-semiconductor (CMOS) technologies, because they exhibit high crystallization temperature and result in high carrier mobility at the Si interface. Zr-silicate layers with Zr: Si atom percent ratios of 2:1 and 1:1 were deposited on Al_2O_3 and SiO_2, respectively. For these layers, we found k values of 7.5 +- 0.8 and 13 +- 1.3. Crystallization occurs at 1000 and 850 deg C, respectively. Based on these properties, it is concluded that Zr-silicate layers can be regarded as possible gate dielectrics in advanced CMOS technologies.