Electrical and Physical Properties of Er-Doped HfO2 High-k Dielectrics Prepared by Atomic Layer Deposition

摘要

In this article, Er-doped HfO2 high-k dielectrics with 4 and 7% Er were prepared by atomic layer deposition, and their electrical and physical properties were studied. With the incorporation of a small amount of Er up to 7% in this work, it is observed that i the work function of devices TiN metal gate can be modulated toward the Si conduction bandedge and that ii the thermal stability of the HfO2 film is improved, as evidenced by X-ray photoelectron spectroscopy and X-ray diffraction studies. In addition, the k-value and leakage properties of Er-doped HfO2 are comparable to those of HfO2.