Physical and structural properties of HfO2/SiO2 gate stack high-k dielectrics deposited by atomic layer deposition

机译：HFO 2 / SIO 2 栅极堆叠高k电介质的物理和结构性能

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The ultra-thin HfO₂/SiO₂ gate stack high-k dielectrics were deposited by atomic layer deposition. The physical and structural properties of the HfO₂/SiO₂ films were investigated. Atomic force microscopy, transmission electron microscopy and X-ray reflectivity analysis results indicate that the atomic layer deposition can deposit HfO₂/SiO₂ gate stack dielectrics with good performance.

机译：通过原子层沉积沉积超薄HFO _{2 / siO _{2 栅极堆栈高k电介质。研究了HFO _{2 / siO _{2 膜的物理和结构性质。原子力显微镜，透射电子显微镜和X射线反射率分析结果表明原子层沉积可以沉积HFO _{2 SIO _{2 栅极堆叠电介质，具有良好的性能。}}}}}}

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《International Symposium on the Physical and Failure Analysis of Integrated Circuits》|2009年||共4页
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中图分类 TN43-53;
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X-ray reflection; atomic force microscopy; hafnium compounds; high-k dielectric thin films; reflectivity; silicon compounds; transmission electron microscopy; HfO2/SiO2 gate stack high-k dielectrics; HfOlt; subgt; 2lt; /subgt; -SiOlt; subgt; 2lt; /subgt; X-ray reflectivity analysis; atomic layer deposition; physical properties; structural properties;

机译：X射线反射;原子力显微镜;铪化合物;高k电介质薄膜;反射率;硅化合物;透射电子显微镜;HFO2 / SiO2栅极堆叠高k电介质;HFO＆lt;2 / sub＆gt;-sio＆lt;亚＆gt;2＆lt;/ sub＆gt;X射线反射率分析;原子层沉积;物理性质;结构性;

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1. LOWER BOUNDS FOR SUP+INF AND SUP*INF AND AN EXTENSION OF CHEN-LIN RESULT IN DIMENSION 3 [J] . Samy Skander Bahoura 数学物理学报（英文版） . 2008,第004期
2. xN y and SiO 2 dielectric layers and rear surface passivation by using SiO 2/SiO xN y stack layers with screen printed local Al-BSF for c-Si solar cells]]> [J] . Nagarajan Balaji, Huong Thi Thanh Nguyen, Cheolmin Park, Current applied physics: the official journal of the Korean Physical Society . 2018,第1期

机译：<！[CDATA [SIO x n Y 和SIO 2 介电层和后表面钝化使用SIO 2 / SIO X N Y 堆叠图层，带有C-Si太阳能电池的屏幕印刷本地AL-BSF]]>
3. Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation [J] . Schuldis D., Richter A., Benick J., Applied Physics Letters . 2014,第23期

机译：超薄原子层沉积的Al 2 O 3 层的c-Si / Al 2 O 3 界面的性质被SiN x 覆盖以进行c-Si表面钝化
4. Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry [J] . Xu K., Sio H., Kirillov O. A., Journal of Applied Physics . 2013,第2期

机译：用内部光发射和光谱椭圆光度法测定InP上原子层沉积的Al 2 O 3 和HfO 2 的能带偏移
5. Physical and structural properties of HfO2/SiO2 gate stack high-k dielectrics deposited by atomic layer deposition [C] . International Symposium on the Physical and Failure Analysis of Integrated Circuits . 2009

机译：HFO 2 / SIO 2 栅极堆叠高k电介质的物理和结构性能
6. Metal-gate/high-k dielectric stack engineering by atomic layer deposition: Materials issues and electrical properties. [D] . Sreenivasan, Raghavasimhan. 2007

机译：通过原子层沉积进行金属栅/高k电介质堆叠工程：材料问题和电性能。
7. Interfacial Electrical and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition [O] . Yan-Qiang Cao, Bing Wu, Di Wu, 2017

机译：等离子体增强原子层沉积法原位形成SiO2中间层的HfO2 / Ge叠层的界面电和能带对准特性
8. Temperature (5.6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks [O] . Richard G. Southwick, J. Reed, C. Buu, 2008

机译：HFO 2 / SIO 2 和SIO 2 MOS栅堆叠的温度（5.6-300k）依赖性比较

Physical and structural properties of HfO2/SiO2 gate stack high-k dielectrics deposited by atomic layer deposition

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