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Extremely high surface area metallurgical-grade porous silicon powder prepared by metal-assisted etching

机译:通过金属辅助蚀刻制备的超高表面积冶金级多孔硅粉

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Metallurgical-grade silicon powder (10 m~2/g surface area) has been porosified using a metal-assisted chemical etch process based on hydrofluoric acid-ferric chloride chemistry. By controlling the reagent concentrations and ratios, the degree of porosification has been varied. Initiating the reaction at temperatures below 0°C, typically between -15°C and -25°C, yields etched powders with spectacularly increased surface area and pore volume (porosity). The reduced temperature, and its subsequent control, favors pore nucleation and propagation while minimizing bulk chemical etching. Using this process, mesoporous powders with surface areas up to 480 m2/g and pore volumes up to 0.52 ml/g have proved easily achievable at the 10 g batch level.
机译:冶金级硅粉(表面积为10 m〜2 / g)已使用基于氢氟酸-氯化铁化学的金属辅助化学蚀刻工艺进行了多孔化处理。通过控制试剂的浓度和比例,可以改变孔隙度。在低于0°C的温度(通常在-15°C至-25°C的温度)下引发反应,将产生具有显着增加的表面积和孔体积(孔隙率)的蚀刻粉末。降低的温度及其随后的控制,有利于孔形核和扩散,同时最大程度地减少了化学腐蚀。使用该方法,已证明在10 g批料量下可以轻松获得表面积高达480 m2 / g和孔体积高达0.52 ml / g的中孔粉末。

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