Nonlanthanoid Indium-Substituted Bi_4Ti_3O_(12) Films with Large Remanent Polarization and Fatigue Endurance

摘要

Nonlanthanoid indium-substituted Bi_4Ti_3O_(12) (BInT) films prepared by chemical solution deposition had good ferroelectric performance after annealed at 600 deg C for 15 min in oxygen. BInT films displayed a large remanent polarization (P_r) of 57 mu C/cm~2, coercive field (E_c) of 100 kV/cm, high fatigued remanent polarization >25 mu C/cm~2, nonvolatile polarization >30 mu C/cm~2 after 10~(10) switching cycles, and low annealing temperature of 600 deg C. Good ferroelectric properties are attributed to the substitution of smaller-size indium into bismuth titanate, which alters the dimension of unit cell and prevents the escape of oxygen.