Antimony as a Proper Candidate for Low-Temperature Solid Phase Epitaxially Activated n~+/p Junctions

摘要

Shallow, low-resistive n~+/p junction was investigated for sub 100 nm metal oxide semiconductor field effect transistors (MOS-FETs) using antimony and arsenic ion-implantation and low-temperature rapid thermal annealing. In contrast to As implanted junctions, Sb-doped specimens showed shallower junction depth, lower sheet resistance, and leakage current at low-temperature processing (600 deg C). The results indicated the superiority of antimony to arsenic as a proper dopant for low-temperature activated ultrashallow and low resistive source and drain extensions. Arsenic will not be a proper candidate because of higher sheet resistance, as a consequence of presence of inactive As-vacancy clusters, and higher leakage current for devices that should be fabricated at low temperature with implemention of high-K dielectric metal-electrode gate stacks in next generation MOSFETs