机译:硅用于堆叠静态随机存储器的低温固相外延生长
Samsung Electronics Co., Ltd., Yongin, Kyounggi-do 446-711, Korea,School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea;
Samsung Electronics Co., Ltd., Yongin, Kyounggi-do 446-711, Korea,School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea;
Samsung Electronics Co., Ltd., Yongin, Kyounggi-do 446-711, Korea;
Samsung Electronics Co., Ltd., Yongin, Kyounggi-do 446-711, Korea;
Samsung Electronics Co., Ltd., Yongin, Kyounggi-do 446-711, Korea;
Samsung Electronics Co., Ltd., Yongin, Kyounggi-do 446-711, Korea;
Samsung Electronics Co., Ltd., Yongin, Kyounggi-do 446-711, Korea;
School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea;
School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea;
School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea;
School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea;
机译:低温固相外延再生后退火过程中硼活化和再分布的物理见解
机译:非晶硅固相外延再生过程中掺杂物再分布的相场模型
机译:再谈应变在离子注入硅固相外延再生中的作用
机译:固相外延再生过程中铯和rub从非晶硅中的扩散
机译:硅中离子注入硼的低温固相外延再生。
机译:盘式离心机生物质过程中固相的流变学表征
机译:由于激光,闪光和固相外延再生长退火,III和V族杂质在硅中的溶解度
机译:快速再结晶和离子注入碳对硅上si(sub 1-x)Ge(sub x)合金层固相外延再生的影响