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Novel Interpretations of CMP Removal Rate Dependencies on Slurry Particle Size and Concentration

机译:浆液粒度和浓度对CMP去除速率依赖性的新解释

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摘要

The dependence of chemical mechanical polishing (CMP) performance on particle size and particle concentration was examined. Material removal per abrasive particle is a useful parameter in comparing performance of different abrasives. Impact of particle concentration and particle size on removal rate per particle were different for Ta and TEOS films, indicating differences in material removal mechanisms. The dependencies of removal rate per particle on particle size and concentration were compared with predictions of some of the models reported in published literature. None of these models could successfully predict the results
机译:检查了化学机械抛光(CMP)性能对粒度和颗粒浓度的依赖性。每个磨料颗粒的材料去除是比较不同磨料性能的有用参数。 Ta和TEOS膜的颗粒浓度和粒径对每个颗粒去除速率的影响不同,表明材料去除机理不同。将每个粒子的去除速率对粒度和浓度的依赖性与已发表文献中报道的某些模型的预测值进行了比较。这些模型都无法成功预测结果

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