Sigma Aldrich Fine Chemicals's (SAFC) Hitech electronic materials division says it set out a new roadmap to develop metalorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) processes on silicon semiconductor substrates within five years.
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机译：Sigma Aldrich Fine Chemicals（SAFC）的高科技电子材料部门表示，它制定了新的路线图，以在五年内开发在硅半导体衬底上的金属有机化学气相沉积（MOCVD）和原子层沉积（ALD）工艺。
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