A Comparative Study on p-ZnO:AlAs-ZnO:Al and p-ZnO:AlAsN-ZnO:Al Bilayer Homojunction Diodes Performance

摘要

An attempt has been made to study the performance comparison of homojunctions fabricated using AlAs codoped and AlAsN tridoped low resistive and stable p-ZnO thin films for optoelectronics devices (light emitting diodes and optic sensors) application. The Al monodoped ZnO film has been used as n-layer. X-ray diffraction and time of flight-secondary ion mass spectrometry confirms the formation of good structural quality bilayer homojunction. The junction parameters have been determined using I-V characteristics of the junction by Cheung's and Norde's methods. It has been found that, the homojunction fabricated using tridoped ZnO film showed better performance in comparison with codoped film.