Low Electrode Contact Resistance in Pentacene-Based Thin-Film Transistors by Inserting F_4-TCNQ between Pentacene and A11

摘要

A low source/drain electrode contact resistanceunder low gate voltage is demonstrated by inserting an F_4-TCNQ thin layer between pentacene and Au in pentacene-based thin-film transistors. A contact resistance was improved by approximately 32% compared with the transistors without F_4-TCNQ. This improvement was verified via atomic force microscopy, which indicated that the smooth surface of the pentacene layer with F_4-TCNQ modification layercan effectively reduce the contact resistance. Thus, higher on current and therefore improved mobility of 11.27 cm~2 V~(-1) s~(-1) was achieved in the pentacene-based thin-film transistors with a solution-processed barium titanate gate dielectric.