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Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors by Inserting an Ultrathin Teflon Carrier Injection Layer

机译:通过插入超薄的聚四氟乙烯载流子注入层来改善基于顶部接触并五苯的有机薄膜晶体管的性能

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摘要

This work demonstrates top-contact (TC) pentacene-based organic thin-film transistors (OTFTs) fabricated by inserting a Teflon carrier injection layer between the source/drain (S/D) metal electrodes and pentacene channel layer. Compared to devices without a Teflon layer, the inserted 1.5-nm-thick Teflon layer can enhance the drain current and field-effect mobility by 136 and 62%, respectively. The improvements are attributed to the reduction of hole injection barrier and tunneling process at the Au/pentacene interface, which can be confirmed by the reduced contact resistance measured at linear region. We therefore believe that using ultrathin Teflon as the carrier injection layer is a good candidate method to improve the TC-OTFTs performance.
机译:这项工作演示了通过在源/漏(S / D)金属电极和并五苯沟道层之间插入特氟隆载流子注入层而制造的基于顶部接触(TC)并五苯的有机薄膜晶体管(OTFT)。与没有聚四氟乙烯层的器件相比,插入的1.5纳米厚的聚四氟乙烯层可以分别将漏极电流和场效应迁移率提高136%和62%。改善归因于减少了Au /并五苯界面处的空穴注入势垒和隧穿过程,这可以通过减少在线性区域测得的接触电阻来证实。因此,我们认为使用超薄铁氟龙作为载流子注入层是改善TC-OTFTs性能的良好候选方法。

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  • 来源
    《Japanese journal of applied physics》 |2011年第10issue1期|p.100203.1-100203.3|共3页
  • 作者

    Ching-Lin Fan; Ping-Cheng Chiu;

  • 作者单位

    Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan,Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;

    Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;

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  • 正文语种 eng
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