Atomic Layer Deposition of Ru Thin Films Using a Ru(0) Metallorganic Precursor and O_2

摘要

Ruthenium (Ru) thin films were grown on thermally-grown SiO_2 substrate using atomic layer deposition (ALD) by a sequential supply of a zero-valent metallorganic precursor, (ethylbenzyl) (l-ethyl-l,4-cyclohexadienyl)Ru(0) (EBECHRu, C_(16)H_(22)Ru). and molecular oxygen (O_2) between 140 and 350°C while the typical temperature was 225°C. A self-limiting film growth was confirmed at the deposition temperature of 225°C and the growth rate was ~0.042 nm/cycle on the SiO_2 substrate with a negligible number of incubation cycles (approximately 3 cycles). Plan-view transmission electron microscopy analysis showed that nucleation was started after only 3 ALD cycles and the maximum nuclei density of 1.67 x 10~(12)/cm~2 was obtained after 7 ALD cycles. A continuous Ru film with a thickness of ~2.3 nm was formed after 60 ALD cycles. The film resistivity was decreased with increasing deposition temperature, which was closely related to its crystallinity and microstructure, and the minimum resistivity of ~14 μΩ-cm was obtained at the deposition temperature of 350°C. The step coverage of the film deposited between 225 and 270°C was approximately 100% over the contact holes (bottom diameter: 0.065 |xm) with a high aspect ratio (32:1). Finally, the ALD-Ru film was successfully evaluated in terms of its performance as a seed layer for Cu electroplating and as a bottom electrode for a metal-insulator-metal capacitor using an ALD-TiC>2 single layer or an ALD HfO_2/La_2O_3/HfO_2 multilayer as a dielectric.