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Analysis of Low-k Dielectric Thin Films on Thick Substrates by Transmission FTIR Spectroscopy

机译:透射FTIR光谱分析厚基板上的低k介电薄膜

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摘要

Transmission Fourier-transform infrared (T-FTIR) spectra of thin films on thick substrates are characterized by strong interference fringes that hamper quantitative analysis of the observed thin film absorption bands. In this article, we review and present methods for removing these fringes to extract the pure thin film absorption coefficient from the experimental T-FTIR spectra. To illustrate the benefits of a recently developed method for removing such fringes, we analyze T-FTIR spectra for a series of a-SiO2 and a-SiOC:H thin films typically utilized in nano-electronic interconnect structures as low permittivity (i.e. low-k) interlayer dielectrics. The sources and magnitude of the errors present in analysis of both the uncorrected and corrected experimental T-FTIR spectra are compared. We demonstrate that conventional analysis of the uncorrected low-k a-SiOC:H T-FTIR spectra can lead to substantial quantitative errors that are dramatically reduced using the described method for appropriately removing the experimental thin film fringes. (C) The Author(s) 2014. Published by ECS. All rights reserved.
机译:厚基板上薄膜的透射傅立叶变换红外(T-FTIR)光谱的特征在于强烈的干涉条纹,妨碍了观察到的薄膜吸收带的定量分析。在本文中,我们回顾并介绍了去除这些条纹的方法,以便从实验性T-FTIR光谱中提取纯薄膜的吸收系数。为了说明最近开发的去除此类条纹的方法的益处,我们分析了通常用于纳米电子互连结构中的一系列a-SiO2和a-SiOC:H薄膜的T-FTIR光谱,这些薄膜具有低介电常数(即低介电常数)。 k)层间电介质。比较了未校正和校正后的实验T-FTIR光谱分析中存在的误差的来源和大小。我们证明了对未校正的低k a-SiOC:H T-FTIR光谱的常规分析会导致大量的定量误差,使用所述方法适当去除实验性薄膜条纹可以大大降低定量误差。 (C)作者2014。由ECS出版。版权所有。

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