Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

摘要

We have fabricated flexible amorphous Indium-Gallium-Zinc-oxide (IGZO) thin-film transistors (TFTs) with back-channel-etch structure by a chemical vapor deposition-free process. All the processes are performed well below 160°C on a polyethylene napthalate (PEN) substrate with anodic aluminum oxide as gate dielectric, which can be highly immune to the strain failure. The IGZO-TFTs show field-effect mobility of 11.2 cm~2/V s, subthreshold swing (SS) of 0.27 V/decade, low off-state current ~10 fA, low leakage current < 1 pA and high Ion/Ioff ratio of 10~9. Meanwhile, the performance of flexible IGZO-TFTs do not deteriorate during the bending with the curvature radius as 10 mm. Using a PEN as substrate, flexible active-matrix organic light-emitting diode (AMOLED) displays driven by the IGZO-TFTs have been demonstrated.