Numerical study of AlGaAs/GaAs HBTs

摘要

A two dimensional physical model of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was developed. The resulting model includes four recombination processes: SRH, Auger, band-to-band radiation and surface recombination. This model was analyzed to provide an insight into the physics of HBTs. Based on the results, the carrier injection, recombination in the base, and the effect of the heavily doped base and incomplete ionization in HBTs were clarified.