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首页> 外文期刊>International Journal of Nanotechnology >Ordered semiconductor CdO nanowire arrays: synthesising by one-step low-temperature electrodeposition and optical properties
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Ordered semiconductor CdO nanowire arrays: synthesising by one-step low-temperature electrodeposition and optical properties

机译:有序半导体CdO纳米线阵列:通过一步式低温电沉积和光学性质进行合成

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摘要

One-step low-temperature electrodeposition has been employed to fabricate ordered polycrystalline CdO nanowire arrays using anodic alumina membrane (AAM) templates by reduction of dissolved oxygen in presence of Cd{sup}(2+) in the electrolyte. The CdO nanowires are uniform, and their length depends on the electrodeposition time and more than 30 μm length nanowires can be easily got by this method. The structure characterisation and optical properties of the CdO nanowires are discussed in the paper. The blue shift of the direct band gap determined by the optical absorption of the CdO nanowires is attributed to the interface effect and the quantum confinement effect of the CdO nano-crystalline grains.
机译:通过使用阳极氧化铝膜(AAM)模板,通过减少电解质中Cd {sup}(2+)存在下的溶解氧,已采用一步式低温电沉积来制造有序多晶CdO纳米线阵列。 CdO纳米线是均匀的,其长度取决于电沉积时间,通过此方法可以轻松获得长度超过30μm的纳米线。本文讨论了CdO纳米线的结构表征和光学性质。由CdO纳米线的光吸收确定的直接带隙的蓝移归因于CdO纳米晶粒的界面效应和量子约束效应。

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