Fourier-IR Spectroscopic Study of the Structure of High-density Polyethylene Composites with Semiconductor Fillers GaAs and GaAs

摘要

The method of Furrier IR spectroscopy was applied in the study of the structure of high-density polyethylene composites with semiconductor fillers GaAs and GaAs at room temperature. It was revealed that in case of 2-3 mass % content of GaAs and 5-8 mass % of GaAs in PE films the maximum degree of crystallinity is obtained. It is shown that GaAs and GaAs fillers with 50 micron dispersion in polyethylene compositions play a role of structure formers in the increase of the degree of crystallinity and a change in the supramolecular polymer structure.