Comparison of the Electrical Properties for Undoped and Doped Indium Tin Oxide with Nanometal Oxides

摘要

This work represents the electrical properties of undoped Indium Tin Oxide (ITO) (90 : 0) and doped ITO with 6 mass-% of nano-Zr, Cr and Cu. X-ray diffraction (XRD) analysis confirmed that there are no phases for tin oxide or other impurities. The undoped ITO has single cubic bixbyite structure. The particle size of all the prepared samples are in the nano range (19-33nm), which was confirmed by transmission electron microscopy (ТЕМ) images of the samples. The dielectric properties such as dielectric constant εnd dielectric loss were measured as a function of temperature from room temperature to 773 °K and frequency varying from 50 Hz to 5 MHz. The dielectric constant values increase with the increase of both temperature and frequency. Moreover, it was found that dielectric loss ε decreases with frequency increasing at all temperatures. This is explained by the fact that as frequency is raised, the interfacial dipoles have less time to orient themselves in the direction of the alternating field. The frequency-dependent AC conductivity follows the power law exponents if the exponent is less than unity and decrease a little with increasing temperature. The power law dependence of the AC conductivity on frequency corresponds to hopping of carriers through traps sites separated by an energy barrier of various heights.