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Semiconductor device having a substrate an undoped silicon oxide structure and an overlaying doped silicon oxide structure with a sidewall terminating at the undoped silicon oxide structure
Semiconductor device having a substrate an undoped silicon oxide structure and an overlaying doped silicon oxide structure with a sidewall terminating at the undoped silicon oxide structure
An etchant including C2HxFy, where x is an integer from two to five, inclusive, where y is an integer from one to four, inclusive, and where x plus y equals six, etches doped silicon dioxide with selectivity over both undoped silicon dioxide and silicon nitride. Thus, undoped silicon dioxide and silicon nitride may be employed as etch stops in dry etch processes which utilize the C2HxFy-containing etchant. C2HxFy may be employed as either a primary etchant or as an additive to another etchant or etchant mixture. The invention also includes semiconductor devices that include structures that have been patterned with an etchant of the present invention or in accordance with the method of the present invention. Specifically, the present invention includes semiconductor devices including doped silicon oxide structures with substantially vertical sidewalls and adjacent undoped silicon oxide or silicon nitride structures exposed adjacent the sidewall.
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机译:包含C 2 Sub> H x Sub> F y Sub>的蚀刻剂,其中x是2到5之间的整数,包括y,y是1之前的整数到四个(包括四个),并且x加y等于六个,蚀刻掺杂的二氧化硅的选择性要高于未掺杂的二氧化硅和氮化硅。因此,在使用含C 2 Sub> H x Sub> F y Sub>的干法刻蚀工艺中,未掺杂的二氧化硅和氮化硅可用作刻蚀停止层。蚀刻剂。 C 2 Sub> H x Sub> F y Sub>既可以用作主要蚀刻剂,也可以用作其他蚀刻剂或蚀刻剂混合物的添加剂。本发明还包括半导体器件,该半导体器件包括已经用本发明的蚀刻剂或根据本发明的方法构图的结构。具体地,本发明包括半导体器件,该半导体器件包括具有基本垂直的侧壁的掺杂的氧化硅结构和在侧壁附近暴露的相邻的未掺杂的氧化硅或氮化硅结构。
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