A device for growing silicon films on standard wafers using a sublimation source

摘要

A device for depositing silicon films from a sublimation source on standard silicon wafers with diameters of 52-100 mm is described. The source is a silicon single crystal heated to a preset temperature of 1300-1380A degrees C. The uniform thickness and homogeneous doping over the wafer area are obtained by moving the sublimation source relative to the wafer.