A device for sublimation molecular beam deposition of erbium-doped silicon films

摘要

The device described contains a source of Er vapors in the form of a rectangular erbium strip heated to a temperature of 800-950℃ by a current passing through it. The base material (Si) flow was produced by sublimation of a silicon bar cut from a single-crystal ingot. The device was used for growing epitaxial Si layers with an Er concentration of 5 × 10{sup}18-10{sup}21 cm{sup}(-3).