PREPARATION AND ETCHING OF SILICON-BASED PIEZOELECTRIC THIN FILMS FOR INTEGRATED DEVICES

摘要

Lead-zirconate-titanate (PZT) and ZnO thin films on silicon substrates were prepared by a sol-gel method. Phase characterization and crystal orientation of the films were investigated by X-ray diffraction analysis (XRD). It was shown that the PZT thin films had a perfect perovskite structure after annealed at a low temperature of 600 square, and the ZnO thin films were well crystallized with (002) preferred orientation at a low annealing temperature of 400 square. PZT thin films were chemically etched using HCl/HF solution through typical semiconductor lithographic process, and ZnO thin films were wet etched using acidic and alkaline etchants. The etching conditions were optimized. The etching precision can be higher than 1 mu m.