用于射频集成的高Q硅基电感的优化设计

摘要

采用理论分析与电磁仿真结合的方法,对硅上多层金属构成的螺旋电感进行电性能研究,优化并获得一种适用于射频电路集成的硅基射频高Q电感.对于影响电感Q值的多种损耗机制,重点研究了趋肤效应对电感的影响.并通过结构参数及金属层叠优化后,硅上电感的Q值可以达到60以上,自谐振频率可以达到10 GHz以上,可以较好地应用于射频系统中的滤波选频及匹配等网络.%The electrical performance of silicon-based spiral indicator constituted with multi-layer metal is studied by the combined method of theoretical analysis and electromagnetic simulation. The silicon-based RF high-Q indicator applied to RF cir-cuit integration was optimized and acquired. Among various loss mechanisms influencing Q-value of the indicator,the influence of skin effect on the indicator is researched emphatically. The silicon-based Q-value of the indicator after optimizing the struc-ture parameter and the metal stacking can reach 60,and the self-resonant frequency can achieve 10 GHz. The inductor can be better applied to networks of filtering,frequency-selecting and matching in RF system.