One-Transistor-Capacitor (1TC) Structure of Non-Volatile Ferroelectric RAM Using 0.95(Na_(0.5)Bi_(o.5))Ti0_3-0.05BaTi0_3 Thin Film

摘要

Using RF magnetron sputter method, ferroelectric 0.95(Na_(0.5)Bi_(0.5))Ti0_3-0.05BaTi0_3 + lwt% Bi_O_3 (NBT-BT3) thin films were deposited on SiO_2/Si and Pt/Ti/SiO_2/Si substrates. The as-deposited films were crystallizes by a conventional thermal annealing (CTA) process conducted in air at temperatures 600°Cfor 60 min. The large memory window and stable leakage current density were measured by C-V and I-V method. Besides, the ferroelectric properties of the annealed NBT-BT3 thin films were also investigated. Furthermore, the transfer characteristics of one-transistor-capacitor (1TC) type FeRAM devices with bottom gate structure using NBT-BT3 gate oxide had been develop and discussed.